You are currently exploring our in-stock options for part number 722912-50 with the NSN 5962012041656. This product is listed with the description “Microcircuit Memory” and is manufactured by Raytheon Company. If you are looking to purchase this part, we encourage you to complete and submit the RFQ form below with as much information as you can provide, such as your desired quantity, budget, shipping time frame, and more. Within 15 minutes of receiving and reviewing your submission, one of our experts will reach out with a quote that is tailored to your needs.
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We supply all relevant information alongside the listings on our website, that way you know you are always getting the exact item you require. For example, part number 722912-50 is listed alongside the NSN 5962-01-204-1656 and belongs to the FSC 5962 Microcircuits Electronic. Additionally, it is also under the CAGE Code 05869, which is assigned to Raytheon Company. At Aerospace Procurement, you can trust that each product in our inventory is up to industry standards, as we are committed to various quality assurance practices. For example, we uphold a strict NO CHINA SOURCING pledge to ensure that each part is shipped out alongside its manufacturer trace documentation and qualifying certifications. These practices and more allow us to operate with AS9120B, ISO 9001:2015, and FAA AC 00-56B accreditation. Get in contact with us today to see how we can make the procurement process for part number 722912-50 seamless.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-204-1656 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 012041656 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 722912-50 | 2 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AGAV | END ITEM IDENTIFICATION | COMPUTER-DISPLAY SET AN/UYQ-21(V) |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT AND BIPOLAR AND PROGRAMMED AND SCHOTTKY AND W/ACTIVE PULL-UP |
| CQSJ | INCLOSURE MATERIAL | CERAMIC OR GLASS OR METAL |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 794.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
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