You are currently exploring our in-stock options for part number S82S129W with the NSN 5962010766610. This product is listed with the description “Microcircuit Memory” and is manufactured by Philips Semiconductors Ltd. If you are looking to purchase this part, we encourage you to complete and submit the RFQ form below with as much information as you can provide, such as your desired quantity, budget, shipping time frame, and more. Within 15 minutes of receiving and reviewing your submission, one of our experts will reach out with a quote that is tailored to your needs.
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We supply all relevant information alongside the listings on our website, that way you know you are always getting the exact item you require. For example, part number S82S129W is listed alongside the NSN 5962-01-076-6610 and belongs to the FSC 5962 Microcircuits Electronic. Additionally, it is also under the CAGE Code 18324, which is assigned to Philips Semiconductors Ltd. At Aerospace Procurement, you can trust that each product in our inventory is up to industry standards, as we are committed to various quality assurance practices. For example, we uphold a strict NO CHINA SOURCING pledge to ensure that each part is shipped out alongside its manufacturer trace documentation and qualifying certifications. These practices and more allow us to operate with AS9120B, ISO 9001:2015, and FAA AC 00-56B accreditation. Get in contact with us today to see how we can make the procurement process for part number S82S129W seamless.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-076-6610 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 010766610 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | U | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
SN54S287W | 2 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.440 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.085 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 910.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DI |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 82577-932820 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 16 FLAT LEADS |
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