You are currently exploring our in-stock options for part number GM820AUF1RN with the NSN 5962010819132. This product is listed with the description “Microcircuit Memory” and is manufactured by Northrop Grumman Systems Corporation. If you are looking to purchase this part, we encourage you to complete and submit the RFQ form below with as much information as you can provide, such as your desired quantity, budget, shipping time frame, and more. Within 15 minutes of receiving and reviewing your submission, one of our experts will reach out with a quote that is tailored to your needs.
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We supply all relevant information alongside the listings on our website, that way you know you are always getting the exact item you require. For example, part number GM820AUF1RN is listed alongside the NSN 5962-01-081-9132 and belongs to the FSC 5962 Microcircuits Electronic. Additionally, it is also under the CAGE Code 26512, which is assigned to Northrop Grumman Systems Corporation. At Aerospace Procurement, you can trust that each product in our inventory is up to industry standards, as we are committed to various quality assurance practices. For example, we uphold a strict NO CHINA SOURCING pledge to ensure that each part is shipped out alongside its manufacturer trace documentation and qualifying certifications. These practices and more allow us to operate with AS9120B, ISO 9001:2015, and FAA AC 00-56B accreditation. Get in contact with us today to see how we can make the procurement process for part number GM820AUF1RN seamless.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-081-9132 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 010819132 | N | D | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| D | U | |||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 438251-01 | 1 | 2 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFJQ | STORAGE TEMP RANGE | -65.0/125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND POSITIVE OUTPUTS AND HERMETICALLY SEALED AND W/ENABLE AND W/DECODED OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 11 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 26.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS,INDIVIDUAL MANUFACTUREER STANDARDS,ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0/125.0 DEG CELSIUS |
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