You are currently exploring our in-stock options for part number FDV302P with the NSN 5961014874973. This product is listed with the description “Transistor” and is manufactured by Fairchild Semiconductor Corp. If you are looking to purchase this part, we encourage you to complete and submit the RFQ form below with as much information as you can provide, such as your desired quantity, budget, shipping time frame, and more. Within 15 minutes of receiving and reviewing your submission, one of our experts will reach out with a quote that is tailored to your needs.
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We supply all relevant information alongside the listings on our website, that way you know you are always getting the exact item you require. For example, part number FDV302P is listed alongside the NSN 5961-01-487-4973 and belongs to the FSC 5961 Semiconductor Devices and Associated Hardware. Additionally, it is also under the CAGE Code 07263, which is assigned to Fairchild Semiconductor Corp. At Aerospace Procurement, you can trust that each product in our inventory is up to industry standards, as we are committed to various quality assurance practices. For example, we uphold a strict NO CHINA SOURCING pledge to ensure that each part is shipped out alongside its manufacturer trace documentation and qualifying certifications. These practices and more allow us to operate with AS9120B, ISO 9001:2015, and FAA AC 00-56B accreditation. Get in contact with us today to see how we can make the procurement process for part number FDV302P seamless.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-487-4973 Item PartTypeName: TRANSISTOR | 5961 | 014874973 | N | B | ||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| B | A | 0 | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| A1Z1029034 | 5 | 2 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -25.0 NOMINAL DRAIN TO SOURCE VOLTAGE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| CTQX | CURRENT RATING PER CHARACTERISTIC | -0.12 AMPERES NOMINAL DRAIN CURRENT |
| ALAT | (NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE | P-CHANNEL INSULATED GATE TYPE |
| CTRD | POWER RATING PER CHARACTERISTIC | 0.35 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
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