You are currently exploring our in-stock options for part number PAL16R6-12 BRA with the NSN 5962014082571. This product is listed with the description “Microcircuit Memory” and is manufactured by Advanced Micro Devices Inc. If you are looking to purchase this part, we encourage you to complete and submit the RFQ form below with as much information as you can provide, such as your desired quantity, budget, shipping time frame, and more. Within 15 minutes of receiving and reviewing your submission, one of our experts will reach out with a quote that is tailored to your needs.
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We supply all relevant information alongside the listings on our website, that way you know you are always getting the exact item you require. For example, part number PAL16R6-12 BRA is listed alongside the NSN 5962-01-408-2571 and belongs to the FSC 5962 Microcircuits Electronic. Additionally, it is also under the CAGE Code 34335, which is assigned to Advanced Micro Devices Inc. At Aerospace Procurement, you can trust that each product in our inventory is up to industry standards, as we are committed to various quality assurance practices. For example, we uphold a strict NO CHINA SOURCING pledge to ensure that each part is shipped out alongside its manufacturer trace documentation and qualifying certifications. These practices and more allow us to operate with AS9120B, ISO 9001:2015, and FAA AC 00-56B accreditation. Get in contact with us today to see how we can make the procurement process for part number PAL16R6-12 BRA seamless.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-408-2571 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 014082571 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| ROM/PROM | 5 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| CTQX | Current Rating Per Characteristic | 12.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE |
| CZER | Memory Device Type | PAL |
| AFJQ | Storage Temp Range | -65.0/+150.0 DEG CELSIUS |
| ADAT | Body Width | 0.200 INCHES MAXIMUM |
| CQZP | Input Circuit Pattern | 16 INPUT |
| MRC | Decoded Requirement | Clear Text Reply |
| TEST | Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CWSG | Terminal Surface Treatment | SOLDER |
| CQSZ | Inclosure Configuration | DUAL-IN-LINE |
| ADAQ | Body Length | 1.060 INCHES MAXIMUM |
| AEHX | Maximum Power Dissipation Rating | 1.2 WATTS |
| ADAU | Body Height | 0.310 INCHES MAXIMUM |
| CZEN | Voltage Rating And Type Per Characteristic | 5.0 VOLTS NOMINAL POWER SOURCE |
| AFGA | Operating Temp Range | -55.0/+125.0 DEG CELSIUS |
| ZZZK | Specification/Standard Data | 81349-MIL-M-38510 GOVERNMENT SPECIFICATION |
| TTQY | Terminal Type And Quantity | 20 PRINTED CIRCUIT |
| CQWX | Output Logic Form | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
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