We at ASAP Semiconductor appreciate your vested interest in the NSN 5962-01-078-7029 inventory we offer here on Aerospace Procurement. Below, we have presented a variety of information pertaining to NSN 5962-01-078-7029 supplies, as well as part numbers like 113-0035-003, 202798-006, 293510, 477-1408-002, 48-050418-02, and others. Take your time perusing resources, and if you find any items that match your requirements, we encourage you to request a quote. Our online Request for Quote (RFQ) forms simplify the process of obtaining pricing and procurement details, enabling you to submit information like your budget and expected fulfillment timeline to receive tailored responses from our staff within 15 minutes of our review. You can also give us a call or email using the information at the bottom of this webpage, as we would be happy to hear about your needs and assist you that way.
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Item Name | Microcircuit Memory |
Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
National Item Identification Number (NIIN) | 01-078-7029 (010787029) |
NCB Code | USA (01) |
Manufacturer | Thermo Electron North America Llc, Bae Systems Inc, Eaton Corporation, Boeing Company The, Northrop Grumman Systems Corporation, Intersil Corporation, Military Specifications, Hamilton Sundstrand Corporation, Raytheon Company, Philips Semiconductors Ltd, Northrop Grumman Corporation, Harris Corporation, Rockwell Collins Aerospace, Mmi Amd |
Part Number | Manufacturer | Item Name | Cage Code | RFQ |
---|---|---|---|---|
113-0035-003 | thermo electron north america llc | microcircuit memory | 52787 | RFQ |
202798-006 | bae systems inc | microcircuit memory | 81413 | RFQ |
293510 | eaton corporation | microcircuit memory | 88869 | RFQ |
477-1408-002 | boeing company the | microcircuit memory | 94756 | RFQ |
48-050418-02 | northrop grumman systems corporation | microcircuit memory | 15280 | RFQ |
540723 | intersil corporation | microcircuit memory | 34371 | RFQ |
56S821 | intersil corporation | microcircuit memory | 32293 | RFQ |
5962-3820302BEB | military specifications | microcircuit memory | 81349 | RFQ |
5962-3820302BEX | military specifications | microcircuit memory | 81349 | RFQ |
5E8071 149A | hamilton sundstrand corporation | microcircuit memory | 73030 | RFQ |
722901-50 | raytheon company | microcircuit memory | 05869 | RFQ |
912351-1 | bae systems inc | microcircuit memory | 80249 | RFQ |
CC5146 | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
CM0115-703 | northrop grumman corporation | microcircuit memory | 22915 | RFQ |
EL127901 | northrop grumman corporation | microcircuit memory | 22915 | RFQ |
HM7611 | intersil corporation | microcircuit memory | 34371 | RFQ |
HMI-7611A-2 | harris corporation | microcircuit memory | 91417 | RFQ |
HMI7611 | harris corporation | microcircuit memory | 91417 | RFQ |
IM5623 | intersil corporation | microcircuit memory | 32293 | RFQ |
JAN-M38510/20302BEX | military specifications | microcircuit memory | 81349 | RFQ |
M38510-20302BEC | military specifications | microcircuit memory | 81349 | RFQ |
M38510/20302BEB | military specifications | microcircuit memory | 81349 | RFQ |
M38510/20302BEX | military specifications | microcircuit memory | 81349 | RFQ |
MIL-M-38510/203 | military specifications | microcircuit memory | 81349 | RFQ |
N82S129 | philips semiconductors ltd | microcircuit memory | 18324 | RFQ |
PC73532-1 | rockwell collins aerospace | microcircuit memory | 09344 | RFQ |
SM1212 | mmi amd | microcircuit memory | 50364 | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | 55.0/125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | PROGRAMMABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
FEAT | SPECIAL FEATURES | STATIC ELECTRICITY SENSTIVE |
TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/203 GOVERNMENT SPECIFICATION |
Relevant Components for NSN - 5962-01-078-7029, 5962010787029 | ||||
5905-00-763-7181 (5905007637181) | 5910-01-268-7617 (5910012687617) | 5999-01-498-2622 (5999014982622) | 5998-01-263-5256 (5998012635256) | |
5995-01-439-1800 (5995014391800) | 5940-01-044-5977 (5940010445977) | 5999-01-323-1386 (5999013231386) | 5998-00-832-5847 (5998008325847) | |
5955-01-295-2815 (5955012952815) | 5940-00-413-1421 (5940004131421) | 5950-01-134-0674 (5950011340674) | 5930-00-908-2989 (5930009082989) | |
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